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| RN4606 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN4606 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in SM6 (super mini type with 6 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process Unit in mm Equivalent Circuit and Bias Resister Values R1: 4.7k R2: 47k (Q1, Q2 Common) Q1 Maximum Ratings (Ta = 25C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating -50 -50 -5 -100 Unit V V V mA JEDEC EIAJ TOSHIBA Weight: 0.015g 2-3N1A Q2 Maximum Ratings (Ta = 25C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating 50 50 5 100 Unit V V V mA 000707EAA2 * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. 2001-02-08 1/4 RN4606 Q1, Q2 Common Maximum Ratings (Ta = 25C) Characteristic Collector power dissipation Junction temperature Storage temperature range Symbol PC * Tj Tstg Rating 300 150 -55~150 Unit mW C C * Total rating Marking Equivalent Circuit (Top View) 000707EAA2 * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 2001-02-08 2/4 RN4606 Q1 Electrical Characteristics (Ta = 25C) Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Input voltage (ON) Input voltage (OFF) Transition frequency Collector output capacitance Symbol ICBO ICEO IEBO hFE VCE (sat) VI (ON) VI (OFF) fT Cob Test Circuit Test Condition VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -5V, IC = 0 VCE = -5V, IC = -10mA IC = -5mA, IB = -0.25mA VCE = -0.2V, IC = -5mA VCE = -5V, IC = -0.1mA VCE = -10V, IC = -5mA VCB = -10V, IE = 0 Min -0.074 80 -0.7 -0.5 Typ. -0.1 200 3 Max -100 -500 -0.138 -0.3 -1.3 -0.8 6 Unit nA mA V V V MHz pF Q2 Electrical Characteristics (Ta = 25C) Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Input voltage (ON) Input voltage (OFF) Transition frequency Collector output capacitance Symbol ICBO ICEO IEBO hFE VCE (sat) VI (ON) VI (OFF) fT Cob Test Circuit Test Condition VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10mA IC = 5mA, IB = 0.25mA VCE = 0.2V, IC = 5mA VCE = 5V, IC = 0.1mA VCE = 10V, IC = 5mA VCB = 10V, IE = 0, f = 1 MHz Min 0.074 80 0.7 0.5 Typ. 0.1 250 3 Max 100 500 0.138 0.3 1.3 0.8 6 Unit nA mA V V V MHz pF Q1, Q2 Common Electrical Characteristics (Ta = 25C) Characteristic Input resistor Resistor ratio Symbol R1 R1/R2 Test Circuit Test Condition Min 3.29 0.09 Typ. 4.7 0.1 Max 6.11 0.11 Unit k 2001-02-08 3/4 RN4606 2001-02-08 4/4 |
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